A Field Effect Transistor Synthesized using Multiple Al-doped ZnO Nanorods

Manoj Kumar, Vijay Kumar Lamba


The different Al-doped ZnO nanorods and a SiO2 gate insulator has been used to make nanorod field-effect transistors (FETs). The utilization of numerous nanorods gives higher on-current without significant declination in threshold voltage move and subthreshold inclines. It has been recorded that the on-current of the different ZnO nanorod FETs increases around directly with the quantity of nanorods, with on-current flows of roughly 1.8uA for each nanorod and little change in off-current roughly 4.2 pA. The subthreshold slopes and on–off current ratio of 5x102 regularly enhance as the quantity of nanorods inside the channel is expanded, reflecting great consistency of properties from nanorod to nanorod. The electrical and optical properties were studied by using deposition parameters and the optimal conditions were defined. A comparison between conventional and Al-doped ZnO nanorods FETs shows that a conventional nanorod FET has a low conductivity in contrast with Al-doped ZnO nanorods FET. It has also been shown that temperature-dependent current-voltage relationship of single ZnO nanorod FETs affects the actuation energy of the drain current at gate voltages both above and below a certain limit.


Keywords: Nanorod, transistor, ZnO, Al-dopant

Cite this Article

Manoj Kumar, Vijay Kumar Lamba. A Field Effect Transistor Synthesized using Multiple Al-doped ZnO Nanorods. Research & Reviews: Journal of Physics. 2018; 7(2): 72–79p


Nanorod, transistor, ZnO, Al-dopant.

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Seidel R, Graham AP, Unger E, Duesberg GS, Liebau M, Steinhoegl W, Kreupl F, Hoenlein W. High-current nanotube transistors. Nano Lett. 2003 May;4:831–834p.

Kagan CR. Thin Film Transistors. New York. Marcel Dekker. 2003.

Huang MH, Mao S, Feick H, Yan HQ, Wu Y, Kind H, Weber E, Russo R, Yang PD. Room-temperature ultraviolet nanowire nanolasers. Science. 2001 June;292(5523):1897–1899p.

Arora A. Synthesis of Undoped and Aluminium Doped Zno based Thin Film by Sol Gel Method. DOI: 10.13140/RG.2.2.29044.35207. 2016 July.

Wang ZL. Zinc oxide nanostructures: growth, properties and applications. J. Phys.: Condens. Matter. 2004;16:829-858p.

Li JY, Chen XL, Li H, He M, Qiao ZY. Fabrication of zinc oxide nanorods. J. Cryst. Growth. 2001 November;233(1–2):5–7p.

Wang ZL, Kong XY, Ding Y, Gao PX, Huges WL, Yang RS, Zhang Y. Semiconducting and piezoelectric oxide nanostructures induced by polar surfaces. Adv. Funct. Mater. 2004 October;14(10): 943–956p.

Li JY, Lu CG, Maynor B, Huang SM, Liu J. Controlled growth of long GaN nanowires from catalyst patterns fabricated by dip-pen nanolithographic techniques. Chem. Mater. 2004 May;16(9):1633–1636p.

DOI: https://doi.org/10.37591/rrjophy.v7i2.938


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