Electrical Characteristics of Microelectronic GaN based HEMTs at the AlGaN Thickness of 10 nm

Authors

  • Subhadeep Mukhopadhyay Department of Electronics and Communication Engineering, National Institute of Technology Arunachal Pradesh, Yupia, District-Papum Pare, Arunachal Pradesh, India

DOI:

https://doi.org/10.37591/rrjophy.v7i1.198

Keywords:

Mole fraction, Drain current, Drain voltage, Gate voltage, Gate length

Abstract

Electrical Characteristics of Microelectronic GaN based HEMTs at the AlGaN Thickness of 10 nmIn this work, total 3655 individual simulation-outputs are reported. Total 25 individual microelectronic single-heterojunction AlGaN/GaN high electron mobility transistor (HEMT) structures are designed and simulated in this work using the SILVACO-ATLAS software tool. In this work, drain voltage and gate voltage are electrical parameters. Aluminium mole fraction and gate length are structural parameters. The effect of drain voltage on drain current is studied. The effect of gate voltage on drain current is studied. Also, the effect of aluminium mole fraction on drain current is studied. As an effect, the drain current reduces due to larger gate length. This work will be helpful to experimentally fabricate the microelectronic HEMT structures.

 

Keywords: Mole fraction, Drain current, Drain voltage, Gate voltage, Gate length

Cite this Article
Subhadeep Mukhopadhyay. Electrical Characteristics of Microelectronic GaN based HEMTs at the AlGaN Thickness of 10 nm. Research & Reviews: Journal of Physics. 2018; 7(1): 12–23p.

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Published

2018-04-12

Issue

Vol. 7 No. 1 (2018)

Section

Research Article

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