Studies on the DC Characteristics of Microelectronic AlGaN/GaN HEMTs

Authors

  • Subhadeep Mukhopadhyay Department of Electronics and Communication Engineering, National Institute of Technology Arunachal Pradesh, Yupia, District-Papum Pare, Arunachal Pradesh, India

DOI:

https://doi.org/10.37591/rrjophy.v7i2.209

Keywords:

Drain voltage, Gate voltage, Mole fraction, Drain current

Abstract

In this work, total 3752 individual simulation-outputs are reported. Total 25 individual microelectronic single-heterojunction AlGaN/GaN high electron mobility transistor (HEMT) structures are designed and simulated in this work using the SILVACO-ATLAS software tool. In this work, drain voltage and gate voltage are electrical parameters to determine the DC characteristics of HEMTs. Aluminium mole fraction is the structural parameter in this purpose. The effects of drain voltage and gate voltage on drain current are studied for different combinations of AlGaN thickness and gate length. Also, the effect of aluminium mole fraction on drain current is studied for these combinations. This work will be helpful to experimentally fabricate the microelectronic HEMT structures.

 

Keywords: Drain voltage, gate voltage, mole fraction, drain current

Cite this Article

Subhadeep Mukhopadhyay. Studies on the DC Characteristics of Microelectronic AlGaN/GaN HEMTs. Research & Reviews: Journal of Physics. 2018; 7(2): 32–43p.

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Published

2018-06-20

Issue

Vol. 7 No. 2 (2018)

Section

Research Article

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